D880 транзистор характеристики и его российские аналоги

Биполярный транзистор D880 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: D880

Тип материала: Si

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 200 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 50 MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO220

D880 Datasheet (PDF)

1.1. pmd880.pdf Size:129K _upd

PMD880 NPN SILICON TRIPLE DIFFSUED TRANSISTOR …designed for audio frequency power amplifier applications. TO-220AB MAXIMUM RATINGS (Ta = 25 °C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Collector Power Dissipation Ta = 25 °C Pc 1.5 W Colle

1.2. ksd880.pdf Size:59K _fairchild_semi

KSD880 Low Frequency Power Amplifier � Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Dissip

1.3. 2sd880.pdf Size:149K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * High Power Dissipation: PC=30W (TC=25°C) * Complementary to 2SB834 O

1.4. 2sd880.pdf Size:131K _mospec

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CSD880 TO-220 Audio Frequency Power Amplifier Applications. Complementary CSB834 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 60 V Emitter- Base Voltage VEBO 7.0 V Collector Current

1.6. 2sd880.pdf Size:92K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=

1.7. 2sd880.pdf Size:258K _lge

2SD880(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Cu

1.8. 2sd880.pdf Size:516K _wietron

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES: 3 1 * Low frequency power amplifier 1. BASE 2. COLLECTOR * Complement to 2SB834 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

1.9. hed880.pdf Size:72K _shantou-huashan

 N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HED880 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55

150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ 150℃ PC——Collector Dissipation（Tc=25℃）�

1.10. hd880.pdf Size:151K _shantou-huashan

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD880 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55

150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）……�

1.11. d880.pdf Size:118K _jdsemi

R D880 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1． 1． 1．APPLICATION 1． Charger、Emergency lamp and Electric toy control circuit 2． 2． 2．FEATURES 2．

1.12. ftd880.pdf Size:210K _first_silicon

SEMICONDUCTOR FTD880 TECHNICAL DATA FTD880 TRANSISTOR (NPN) A O FEATURES C F Low Frequency Power Amplifier E Complement to FTB834 B DIM MILLIMETERS A 10.15 ± 0.15 B 15.30 MAX C 1.3+0.1/-0.15 P D 0.8 ± 0.1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) E 3.8 ± 0.2 F 2.7 ± 0.2 J H 0.4 ± 0.15 Symbol Parameter Value Unit D J 13.6 ± 0.2 N 2.54 ± 0.2 H N